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  Datasheet File OCR Text:
 STZT2907 STZT2907A
MEDIUM POWER AMPLIFIER
ADVANCE DATA
s
s
s
s
SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE PNP COMPLEMENTS ARE STZT2222 AND STZT2222A RESPECTIVELY
2
1
SOT-223
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter STZT2907 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T c = 25 C Storage Temperature Max. Operating Junction Temperature
o
Value STZT2907A -60 -60 -5 -0.8 -1.5 -65 to 150 150 -60 -40
Unit V V V A W
o o
C C 1/4
October 1995
STZT2907/STZT2907A
THERMAL DATA
R thj-amb * R thj-tab * Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 83.3 10
o o
C/W C/W
* Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I CEX IBEX V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = 0.5V) Base Cut-off Current (V BE = 0.5V) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = rated V CBO V CB = rated V CBO V CE = -30 V V CE = -30 V I C = -10 A T amb = 125 C
o
Min.
Typ.
Max. -20 -10 -50 -50
Unit nA A nA nA V
for STZT2222A for STZT2222A -60
V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain
I C = -10 mA for STZT2907 for STZT2907A I E = -10 A
-40 -60 -5
V V V
V CE(sat) V BE(sat) h FE
I C = -150 mA I C = -500 mA I C = -150 mA I C = -500 mA
I B = -15 mA I B = -50 mA I B = -15 mA I B = -50 mA -10 V 35 75 -10 V 50 100 -10 V 75 100 100 10 50 200
-0.4 -1.6 -1.3 -2.6
V V V V
I C = -0.1 mA V CE = for STZT2907 for STZT2907A I C = -1 mA V CE = for STZT2907 for STZT2907A I C = -10 mA V CE = for STZT2907 for STZT2907A I C = -150 mA V CE = I C = -500 mA V CE = for STZT2907 for STZT2907A
-10 V -10 V
300
fT C CBO C EBO td tr t on ts tf t off
Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-off Time
I C = -10 mA V CE = -10 V f = 100 MHz IE = 0 IC = 0 V CB = -10 V V EB = -2 V f = 1 MHz f = 1 MHz
MHz 8 30 10 40 45 pF pF ns ns ns ns ns ns
I C = -150 mA V CC = -30 V
I B1 = -15 mA
I C = -150 mA V CC = -30 V
I B1 = -I B1 = -15 mA
80 30 100
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
2/4
STZT2907/STZT2907A
SOT223 MECHANICAL DATA
mm MIN. a b c d e1 e4 f g l1 l2 L 2.9 0.67 6.7 3.5 6.3 3 0.7 7 3.5 6.5 2.27 4.57 0.2 0.63 1.5 TYP. 2.3 4.6 0.4 0.65 1.6 MAX. 2.33 4.63 0.6 0.67 1.7 0.32 3.1 0.73 7.3 3.7 6.7 114.2 26.4 263.8 137.8 248 118.1 27.6 275.6 137.8 255.9 MIN. 89.4 179.9 7.9 24.8 59.1 mils TYP. 90.6 181.1 15.7 25.6 63 MAX. 91.7 182.3 23.6 26.4 66.9 12.6 122.1 28.7 287.4 145.7 263.8
DIM.
L
l2
e1
a b f
d c e4
C
l1
B
C
E
g
P008B
3/4
STZT2907/STZT2907A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .
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